MBRB30H60CT?1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,
NRVBB30H60CTT4G, MBRJ30H60CTG
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
60
V
Average Rectified Forward Current
(Rated VR) TC
= 159
?C
IF(AV)
15
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz)
IFRM
30
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
260
A
Operating Junction Temperature (Note 1)
TJ
?55 to +175
?C
Storage Temperature
Tstg
55 to +175
?C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
Controlled Avalanche Energy (see test conditions in Figures 11 and 12)
WAVAL
350
mJ
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance
(MBRB30H60CT?1G and MBR30H60CTG)
Junction?to?Case
Junction?to?Ambient
(MBRF30H60CTG and MBRJ30H60CTG)
Junction?to?Case
(MBRB30H60CTT4G and NRVBB30H60CTT4G)
Junction?to?Case
RJC
RJA
RJC
RJC
2.0
70
4.4
1.6
?C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF
= 15 A, T
C
= 25
?C)
(IF
= 15 A, T
C
= 125
?C)
(IF
= 30 A, T
C
= 25
?C)
(IF
= 30 A, T
C
= 125
?C)
vF
0.62
0.56
0.78
0.71
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC
= 25
?C)
(Rated DC Voltage, TC
= 125
?C)
iR
0.3
45
mA
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ?
2.0%.
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